FDMA1032CZ دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDMA1032CZ	دانلود دیتاشیت

RoHS: true
Type: 1PCSN-Channel&1PCSP-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMA1032CZ
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 700mW
Total Gate Charge (Qg@Vgs): 6nC@4.5V
Input Capacitance (Ciss@Vds): 340pF@10V
Continuous Drain Current (Id): 3.7A;3.1A
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 68mΩ@3.7A,4.5V
Package: MicroFET-6
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Power - Max: 700mW
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)
Base Part Number: FDMA10
detail: Mosfet Array N and P-Channel 20V 3.7A, 3.1A 700mW Surface Mount 6-MicroFET (2x2)